Method of programming phase-change memory element

Procede permettant de programmer un element memoire a changement de phase

Abstract

A method of programming an electrically programmable phase-change memory element to the low resistance state. A first pulse of energy sufficient to transform the device from the low to high resistance states is applied, and a second pulse of energy sufficient to transform the device from the high to low resistance states is applied following the first pulse. In another programming method, the present and desired device states are compared, and programming pulses are applied only if the state of the device needs to be changed.
L'invention concerne un procédé permettant de programmer un élément mémoire à changement de phase électriquement programmable à l'état faible résistance. On applique une première impulsion d'énergie suffisante pour faire passer le dispositif de l'état faible résistance à l'état grande résistance et une seconde impulsion d'énergie suffisante pour faire passer le dispositif de l'état grande résistance à l'état faible résistance. Selon un autre procédé de programmation, on compare les états présents et souhaités du dispositif et on applique les impulsions de programmation lorsqu'il est nécessaire de commuter l'état du dispositif.

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Patent Citations (1)

    Publication numberPublication dateAssigneeTitle
    US-5933365-AAugust 03, 1999Energy Conversion Devices, Inc.Memory element with energy control mechanism

NO-Patent Citations (1)

    Title
    See also references of EP 1196924A4

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